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Key Features
- Low pressure, high-density plasma, good uniformity
- ISM (Inductively Super Magnetron) Plasma Source *ULVAC Patent
- Good repeatability and stability - STAR Electrode * ULVAC Patent
- Superior Process Flexibility - Chamber capable of running both F and Cl processes
- Precise and stable Endpoint Detection - Optical Emission EPD (option), Laser Interference EPD (option)
- Precise wafer temperature control - ESC with backside Helium cooling or Mechanical Chuck
- Easy maintenance - Simple maintenance mechanism
Films
- III-V materials: Selective etching - GaAs, AlGaAs, InGaAs, InGaP, InP
- Insulating Layers: High speed or damage-free etching - SiO2, SiN, Low-K materials, GaAs VIA, InP VIA, SiC VIA
- Organics: Polyimide, BCB
- Metals and Ceramics: W, WSi, TiW, Mo, PZT, STO, BST, SBT, Ir, IrO2, Au, Pt, Ti, TiN, Ta Optical Devices (Laser Diodes, LED, etc..)
- Non-selective etching - GaAs, AlGaAs, AlGaInP, InAlAs, InP, GaN, AlGaN, InGaN, AlN
- ITO, Sapphire Other Devices (MEMS, Stamper for DVD, etc…)
- Si, SiC, Glass, Quartz, Sapphire, C, Diamond-like Carbon, Al, Cr, Mo
SEM Images
