Key Features
- High-density plasma process with high-frequency(27.12 MHz) power supply
- High-quality film using SiH4 precursor: SiO2, SiNx, SiON, a-Si, also for TEOS process for SiO2 film
- Chamber Cleaning with NF3+Ar plasma
- Supports the heater for low-temperature deposition of organic EL
- Substrate size up to 200 x 200mm for CME-200E, Max. 300 x 400mm for CME-400
Need more information?
At ULVAC, we understand that finding the right product is crucial for optimizing your processes, whether you're scaling up production or maintaining precision in your systems. With our wide range of cutting-edge vacuum technologies and in-depth expertise, we will guide you through selecting the ideal solution tailored to your unique requirements.
Contact ULVAC System Sales & Support For inquiries outside North and South America, please contact ULVAC Corporate