Key Features
- High-density plasma process on 27.12MHz
- Supports the deposition of SiH4 (SiO2, SiNx, SiON, a-Si ) and TEOS (SiO2)
- Supports the chamber cleaning by CF4+O2 plasma
- Supports the heater for low-temperature deposition of organic EL
- Supports various substrate sizes
- Vacuum box-enabled indirect sequential processing within C-series (Sputter: CS-200, Evaporation: CV-200)
Applications
- Power devices
- Compound-related devices of LED, LD and highspeed devices
- Organic EL system for R&D use
- Solar battery system for R&D use
- MEMS
