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PE-CVD for Si Films

CME-200E/400 is the most suitable model in the PE-CVD series production system for deposition of Si films with applications as insulator or barrier layers.

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Key Features

  • High-density plasma process with high-frequency(27.12 MHz) power supply
  • High-quality film using SiH4 precursor: SiO2, SiNx, SiON, a-Si, also for TEOS process for SiO2 film
  • Chamber Cleaning with NF3+Ar plasma
  • Supports the heater for low-temperature deposition of organic EL
  • Substrate size up to 200 x 200mm for CME-200E, Max. 300 x 400mm for CME-400

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