- Applicable substrate size: φ125 to 200mm.
- Capable of auto-transfer for Ultra-thin Si wafer up to 50μm thickness.
- Up to 5 unique process recipes.
- Sputter-Etching process developed by ISM.
- Efficient water cooling mechanism by ESC method is available.
- Power device
- WL-CSP (seed layer of electrolytic plating)
- UBM (Barrier metal)