Key Features
- 3 wafers batch processing availability in 6inch dia.
- 7 wafers batch processing availability in 4inch dia.
- 12 wafers batch processing availability in 3 inch dia.
- 29 wafers batch processing availability in 2 inch dia.
- Equipped with ICP with magnetic field (ISM *1), high density plasma source which has a delivery record of over 600 chambers.*1:ULVAC Patent No.3188353
- Proprietary Star electrode *2:ULVAC Patent No.3429391
- Easy Maintenance, stability, and reliability are achieved through re-deposition prevention.
- Dry etching technology availability for various process application. (GaN, Sapphire, Metal, ITO, SiC, AlN, ZnO, 4 elements compound semiconductor materials, etc.)
- Various system options available
