Implant 

IW-630 Ion Implantation System

ULVAC's ion implantation systems have grown to keep pace with device evolution. Past ULVAC developments in ion implantation systems include: Low contamination with the original High Speed Cryo pump and the 80-deg. contamination eliminator magnet.

Very high ion beam parallelism (0.3 deg.) allows advanced channel engineering High-inclination implantation technology and stepped rotation/continuous rotation implantation technology for Halo and Pocket implantation ULVAC can also provide applications to meet demands for custom bipolar devices, and for next-generation wafer processes such as SOI, SOS, SiC wafer and ultra thin wafer.

Features

• Ultimately low energy contamination for wide energy range.
• Very high beam parallelism for advanced channel engineering.
• High uniformity and repeatability by sophisticated beam line configuration and scan mechanism.
• High cooling efficiency with ULVAC original ESC (ElectroStatic Chuck).
• Competitive CoO and CoC.