Etching 

MEMS & MOEMS & Photonics

NLD-6000 provides superior solutions for processes from mask deposition through mask material etching and quartz etching.

Features

• The etching system uses plasma with low pressure (0.2 to 1 Pa), high density (Ne (Ar) : 1 to 5 x 1011 cm-3) and low electron temperature (Te : 2 to 3 eV).
• By adjusting weak coil magnetic field that forms the magnetic neutral beam, it enables to change the plasma spatial distribution for controlling uniformity. ULVAC's NLD etching systems are the only commercially available systems to provide this feature.
• Using lower pressure than other etching systems (which use pressure of 2 to 45 Pa), it enables etching with low radical density, and especially ideal for organic low-K etching, quartz deep etching and high-K material etching.
• Low-pressure etching enables low dust creation, and smooth bottom and side surfaces.

Specifications