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ULVAC Technologies, Inc.
401 Griffin Brook Drive
Methuen, MA 01844
Tel: 978-686-7550
Fax: 978-689-6300 |
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 Sputtering
Systems
Plasma CVD System
A CVD system for silicon oxide
films and nitride films using SiH4 and TEOS. Can create high-quality
films using high frequency (27.12 MHz). Supports single-substrate
processing of substrates between 4 and 8 inches in diameter.
Features
- High-density plasma CVD using high frequency
(27.12 MHz)
- Chamber cleaning with NF3 gas
- Up to 3 chambers can be mounted, including
pre-heating chamber and deposition chamber.
- Same core components as SME Series (sputter
systems) and NE Series (etching systems)
- Substrate bias can be applied (option).
Applications
- Insulating films/protective films between
compound semiconductor layers
- Protective films for electronic parts
- Optical waveguides
- Lens protective films
- MEMS
Specifications
| Item |
Specification |
| System configuration |
Cassette chamber
Transfer chamber
Pre-heating chamber
Deposition chamber |
| Substrates |
4 to 8 inches (diameter) |
| Film types |
SiNx, SiO2, a-Si |
| Film thickness distribution |
± 5% |
| Discharge method |
Parallel beam |
| Discharge frequency |
27.12MHz |
| Substrate bias (option) |
1.6MHz |
| Substrate temperature |
300°C ±
10°C |
For
more information |
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TEL
: 978-686-7550/ FAX : 978-689-6300 |
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