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ULVAC Technologies, Inc.
401 Griffin Brook Drive
Methuen, MA 01844
Tel: 978-686-7550
Fax: 978-689-6300 |
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Sputtering Target Selection Guide
Targets
for VLSI Applications
Applications
|
Element |
Grade |
Wiring |
AI-1% SI-0.5% Cu
AI-0.5% Cu
Cu
W |
5NLA, 5NLB, 5NLC, 5NLD
5NLA, 5NLB, 5NLC, 5NLD
4N5 5N 6N, 7N (For seed Layer)
6N |
| Electrode |
MoSix
WSix
Ti
Pt
TaSix
TiSix
Co
W |
5N
5N
5N, 6N
4N
5N
5N
4N5, 5N (salisaide)
6N (for gate electrode) |
Barrier
metal |
Ti
TiW
Ta
Nb
W
WSix |
4N5, 5N
5N4
3N-5N
3N-4N5
3N-6N
5N |
| Anti-reflection
coating |
Si (B Dope or P Dope)
C
Ti |
6N
4N
3N-5N |
Back
side coating |
Au
Ni
Cu
Cu-Cr
Cr
Ti
Ni-V |
4N
4N
4N
3N5
3N-4N
3N-5N
3N-5N
|
| Dielectric materials |
PZT PLZT
BST STO |
4N
4N |
| Electrode for capacitor |
Ir Ru Pt |
4N, 5N |
| Mask |
MoSix
Ta Compound |
5N
3N-4N |
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Targets for Flat Panel
Display Applications
Applications |
Element |
Grade |
• Transparent dielectric layer for color filter
• Under layer for ITO
|
In2O3-10% SnO2
In2O3-5% SnO2
Si
SiO2 |
4N
6N
4N |
| • Gate electrode
for TFT |
Ta
Mo
Cr
TaMo
Al compound, W compound |
3N, 3N5, 4N
3N, 3N5, 4N
3N
4N, 5N |
| • Transparent
electrode for TFT array side
• Wiring for TFT |
In2O3-10%
SnO2
In2O3-5% SnO2
Al
AlSi
AlSiCu |
4N
4N, 5N
4N, 5N
4N, 5N
|
| • Source/Drain
electrode
• Barrier metal |
Mo, W
Ti |
3N, 3N5, 4N
5N, 6N |
• Bus
electrode for PDP |
Cr
Al
Cu |
3N, 3N5, 4N
4N, 5N
4N, 4N5, 5N, 6N
|
| • Protective layer for
PDP |
Mg Pellet |
3N5 |
| • Transparent dielectric
layer for PDP |
In2O3-10%
SnO2
SnO2 |
4N
3N |
| • Transparent dielectric
layer for OLED |
In2O3-10%
SnO2
In2O3-5% SnO2 |
4N
|
| • FED |
Mo Pellet
Al
Nb
In2O3-10% SnO2
In2O3-5% SnO2
|
3N, 3N5, 4N, 5N
4N, 5N
3N, 4N
4N |
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