ULVAC
provides even, high purity Cu and Ta targets without defects
through the use of ingots made by zone melt purification
and high vacuum technology, and by high precision machining
technology.
Features
The high purity Cu target (purity level:
4N5-7N) is made by using zone melt technology. A purity
level of 5N is realized for the Ta target through melt
purification in a high vacuum.
Target materials with evenstructures suitable
for the LTS (Long Throw Sputtering) are provided through
the use of superior machining technology.
The low particle sputtering targets available
for minute wiring.
Applications
- Barrier metal for copper wiring device
(Ta target)
- Cu target for Cu-seed layer deposition
for Cu wiring
|
Element
|
5N |
6N |
7N |
| Na |
0.03 |
<0.01 |
<0.01 |
| Mg |
<0.01 |
<0.01 |
<0.01 |
| Al |
0.16 |
0.02 |
<0.01 |
| Si |
0.08 |
0.02 |
0.04 |
| P |
--- |
--- |
<0.01 |
| S |
--- |
--- |
0.01 |
| K |
<0.01 |
<0.01 |
<0.01 |
| Ca |
<0.01 |
<0.01 |
<0.01 |
| Cr |
0.06 |
<0.01 |
<0.01 |
| Mn |
0.11 |
0.02 |
--- |
| Fe |
0.83 |
0.04 |
0.01 |
| Ni |
0.87 |
<0.01 |
<0.01 |
| Zn |
--- |
--- |
<0.01 |
| As |
0.43 |
<0.01 |
<0.01 |
| Ag |
--- |
--- |
0.01 |
| Cd |
--- |
--- |
0.02 |
| Sb |
0.15 |
<0.01 |
<0.01 |
| Te |
--- |
--- |
<0.05 |
| Pb |
<0.01 |
<0.01 |
<0.01 |
| Bi |
<0.01 |
<0.01 |
<0.01 |
| Th |
<0.0001 |
<0.0001 |
<0.0001 |
| U
|
<0.0001
|
<0.0001
|
<0.0001
|
Examples of
Impurities in Ta Targets
|
|
Fe |
Ni |
Al |
Cr |
W |
Nb |
Ti |
Si |
Na |
K |
O |
C |
| 4N5 |
£20 |
£10 |
--- |
--- |
£10 |
£10 |
£5 |
£30 |
£1 |
£1 |
£150 |
£20 |
| 5N |
£1 |
£2 |
£1 |
£1 |
£10 |
£5 |
£1 |
£30 |
£0.5 |
£0.5 |
£100 |
£20 |
For
more information |
|
TEL
: 978-686-7550/ FAX : 978-689-6300 |
