|
MPS-4000-HC6 |
Number of mounted cathodes
|
Up
to 8 |
|
Uniform magnetic field application mechanism |
Provided
as standard
(More than 100 Oe at center of substrate) |
| Ultimate pressure |
Less than 7 x 10-7Pa |
| |
100 mm diameter
max. (x 1) |
Heating
mechanism |
Max. 300°C |
Film
thickness uniformity |
±3% or
less in 75 mm diameter |
Maximum
gas supply rate |
Ar : 150 SCCM |
Target
size |
Diameter : 50
mm (2 inches) |
Distance
between target and substrate |
200 mm approx |
Deposition
pressure range |
0.07Pa to 0.26Pa |
Pumping
system (sputtering chamber) |
TMP(1300L/s:N2) |
Gas
supply systems |
50 SCCM for Ar
(x 9 max.)
50 SCCM for O2 (x 1) |
Substrate
transfer system |
Magnet coupling
system |
Preparation
chamber |
Provided as standard |
Oxidation
chamber |
Provided as standard |
Dimensions |
3500W x 3000D
x 2200H (mm) |