- Crystal annealing of ferroelectric thin films.
- Diffusion annealing, oxide film deposition annealing after ion implantation.
- Sintering, alloying treatment of Si and compound wafers.
- Glass substrate uniform temperature annealing.
- Thermal cycle, thermal shock, thermal fatigue testing.
- Temperature programmed desorption testing, catalytic effect testing.
- 50°C/s high speed controlled heating rate. ( ~80°C/s uncontrolled)
- Select the desired heating atmosphere from vacuum, cover gas flow or air.
- Precise temperature control.
- Compact, table-top design.
- Programming and operation by front panel or PC with included software.